Power Amplifiers, Drivers and Power Amplifier Subsystems
Browse our full line of high performance RF and microwave GaN, GaAs MESFET, E-pHEMT, LDMOS, Class A, Class AB, Class C, broadband, hybrid, fully-modifiable power amplifier modules, drivers, and subsystems.
API Technologies' line of Gallium Nitride (GaN) based power amplifiers includes designs operating with output power levels up to 1,000 watts and frequencies to 18 GHz.
API Technologies designs and manufactures LDMOS based power amplifiers for communications band frequency jamming for public safety and military applications.
